The group is internationally recognised for research in the simulation, design and optimisation of both III-V and silicon-based semiconductor devices, in particular quantum cascade lasers, quantum well photodetectors, electro-optic modulators and quantum-dot devices, operating across the near-infrared, mid-infrared and THz spectral ranges. Our work on silicon photonics is focused on the design of silicon and germanium-based optoelectronic devices suitable for integration on silicon substrates. Progress in silicon-based optical transceivers is limited by the lack of an efficient light source. We are investigating the used of strained germanium and germanium/tin alloys, in order to engineer direct-bandgap materials suitable for lasers. Applications of germanium/tin alloys in microelectronics and thermoelectric power generation are also being investigated. Scholarships - View all scholarships Internships
Duration: 1 Year(s)Fees: Not available
Intake | Location |
---|---|
Open intake available until (December), 2023 | Leeds |
February, 2024 | Leeds |
Semester 1 (September), 2024 | Leeds |
Open intake available until (December), 2024 | Leeds |
February, 2025 | Leeds |
Semester 1 (September), 2025 | Leeds |
Open intake available until (December), 2025 | Leeds |
February, 2026 | Leeds |
Semester 1 (September), 2026 | Leeds |
Open intake available until (December), 2026 | Leeds |
February, 2027 | Leeds |
Open intake available until (December), 2027 | Leeds |
IELTS - IELTS (International English Language Testing System) an overall band of 6.0 with no less than 5.5 in each component skill.
TOEFL (Test of English as a Foreign Language) of 87 (with no less than 20 in listening, 20 in reading, 22 in speaking and 21 in writing).
6.0
Overall IELTS band score
Book IELTS
About IELTS
Practice and prepare
TOEFL Internet based overall score: 87.0
Pathway options to study at this institution
129th / 1250
THE World ranking22nd / 130
Complete University guide